This repository contains the work completed during my SN Bose Internship Program 2026 at the National Institute of Technology Silchar.
The internship focused on the numerical modelling of filamentary Resistive Random-Access Memory (RRAM) using COMSOL Multiphysics 6.0 and MATLAB LiveLink.
The primary objective was to develop, automate, and debug a coupled multiphysics simulation framework for studying RRAM switching behaviour.
RRAM switching is associated with the formation and rupture of a conductive filament, resulting in transitions between the High Resistance State (HRS) and Low Resistance State (LRS).
The project involved modelling the electro-thermal behaviour of the device and studying filament evolution using a thermodynamic/free-energy framework.
- Developed a 2D axisymmetric RRAM device model in COMSOL Multiphysics.
- Modelled a metal–insulator–metal structure containing TiN electrodes and HfO₂-based regions.
- Implemented coupled Heat Transfer, Electric Currents, Electrical Circuit, and electromagnetic heating physics.
- Studied a thermodynamic/free-energy framework for modelling filament evolution.
- Integrated COMSOL with MATLAB using LiveLink for MATLAB.
- Automated the OFF → SET → ON → RESET simulation workflow.
- Performed systematic debugging of MATLAB and COMSOL models.
- Extracted simulation data including voltage, current, temperature, filament/gap parameters, and free-energy terms.
- Developed MATLAB-based post-processing for I–V characterization.
- Investigated numerical issues affecting RESET convergence and device-voltage scaling.
- COMSOL Multiphysics 6.0
- MATLAB
- MATLAB LiveLink for COMSOL
The internship resulted in a functional COMSOL–MATLAB simulation and post-processing framework.
The four simulation stages—RRAM_OFF, RRAM_SET, RRAM_ON, and RRAM_RESET—were organized into an automated workflow capable of building models, running simulations, extracting data, performing free-energy minimization, and aggregating results.
A significant part of the work involved systematic debugging and model repair, including issues related to MATLAB syntax, COMSOL parameters, domain selections, mesh settings, parameter naming, and server/memory management.
The developed simulation pipeline was successfully made executable and capable of generating stage-wise numerical data.
However, the results are considered preliminary numerical outputs rather than fully validated RRAM switching characteristics.
The following aspects require further investigation:
- RESET free-energy minimization and convergence
- Device-voltage scaling
- Quantitative validation against reference I–V characteristics
- Ramp-rate and cycle-to-cycle studies
- Quantitative comparison of SET/RESET behaviour with literature
| File | Description |
|---|---|
SN_Bose_Internship_Report.pdf |
Detailed internship report |
RRAM_Internship_Presentation_Sweta_Maurya_FINAL.pptx |
Final internship presentation |
Program: SN Bose Internship Program, 2026
Institution: National Institute of Technology Silchar
Department: Electronics and Instrumentation Engineering
Intern: Sweta Maurya
Duration: June–July 2026
Supervisor: Dr. Shivendra Kumar Pandey
The modelling framework and background study were informed by relevant RRAM literature, including the thermodynamic modelling work by D. Niroula and V. G. Karpov, along with COMSOL Multiphysics and MATLAB LiveLink documentation.